 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BD136/138/140 BD136/138/140 Medium Power Linear and Switching Applications * Complement to BD135, BD137 and BD139 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD136 : BD138 : BD140 : BD136 : BD138 : BD140 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 - 1.5 - 3.0 - 0.5 12.5 1.25 150 - 55 ~ 150 Units V V V V V V V A A A W W C C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD136 : BD138 : BD140 Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 0.1 - 10 25 25 40 Typ. Max. Units V V V A A ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) VCB = - 30V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 5mA VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 150mA IC = - 500mA, IB = - 50mA VCE = - 2V, IC = - 0.5A 250 - 0.5 -1 V V * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage * Pulse Test: PW=350s, duty Cycle=2% Pulsed hFE Classificntion Classification hFE3 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD136/138/140 Typical Characteristics 100 90 80 -500 VCE(sat)[mV], SATURATION VOLTAGE VCE = -2V -450 -400 -350 -300 -250 -200 -150 -100 -50 -0 -1E-3 hFE, DC CURRENT GAIN 70 60 50 40 30 20 10 0 -10 IC = 20 IB -0.01 -0.1 -1 IC = 10 IB -100 -1000 -10 IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -1.1 -10 VBE[V], BASE-EMITTER VOLTAGE -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -1E-3 -0.01 -0.01 -0.1 -1 -10 -1 IC[A], COLLECTOR CURRENT t) (sa V BE 0 IB 1 IC = ) (on V V BE 5 =V CE IC MAX. (Pulsed) IC MAX. (Continuous) 1 ms -1 10us 0u 10 s DC -0.1 BD140 BD136 BD138 -10 -100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area 20.0 17.5 PC[W], POWER DISSIPATION 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD136/138/140 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
Price & Availability of BD13616
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |